DocumentCode
3480989
Title
A MOSFET burst generator for the injection system of LEP
Author
Vossenberg, E.B.
Author_Institution
CERN, Geneva
fYear
1988
fDate
20-22 Jun 1988
Firstpage
39
Lastpage
42
Abstract
A MOSFET burst for the injection system of the Large Electron Positron (LEP) storage rings has been designed which is located in the surface building without the need of a tunnel located pulser. This circuit offers considerable advantages with regard to maintenance and simplicity due to the possibility of interrupting the Switch current. The switch consists of three power MOSFETs connected in series. They switch 150 A in 90 ns and interrupt the current in 200 ns. Pulse length is 3.3 μs. A prototype of the MOSFET burst has performed well during tests, and the measurements confirm analog simulation calculations
Keywords
field effect transistor circuits; pulse generators; storage rings; 150 A; LEP; MOSFET burst generator; Switch current; large electron positron storage ring; Buildings; Electrons; MOSFET circuits; Performance evaluation; Positrons; Power MOSFET; Storage rings; Switches; Switching circuits; Virtual prototyping;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 1988. IEEE Conference Record of the 1988 Eighteenth
Conference_Location
Hilton Head, SC
Type
conf
DOI
10.1109/MODSYM.1988.26232
Filename
26232
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