• DocumentCode
    3481020
  • Title

    Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source

  • Author

    Tsuji, Hiroshi ; Ishikawa, Junzo ; Tomita, Tetsuo ; Gotoh, Yasuhito

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    334
  • Lastpage
    337
  • Abstract
    To obtain negative ions of chemically reactive elements, a material gas and a stainless-steel sputtering target are used instead of an oxide or fluoride sputtering target to prevent charging trouble in the RF plasma-sputter-type heavy negative-ion source which was developed for obtaining intense negative-ion beam with a high-current in mA class. The operational characteristics of the negative-ion source with a feeding of O2 or SF6 gas as an ionized material together with Xe gas is presented. By gradually increasing the Cs supply, O- or F- become to be dominant in the extracted beam. Then, high-current negative ions of mA class such as 4.6 mA for O- 4.3 mA for F- were extracted in a DC-mode operation. Even in the source with a material gas, the surface production of negative ions was found to be the dominant mechanism, because that gas particles introduced and absorbed on the target surface were negatively ionized by sputtering. In a similar manner with nitrogen gas and carbon target, a compound molecular negative ion of CN was obtained with a considerably large amount
  • Keywords
    ion sources; negative ions; plasma devices; sputtering; 4.3 mA; 4.6 mA; CN; Cs; DC mode; F; O; O2; RF plasma-sputter-type heavy negative ion source; SF6; Xe; chemically reactive element; compound gas; high-current ion beam; material gas feeding; negative ion production; stainless steel sputtering target; Chemical elements; Gases; Particle beams; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma sources; Production; Radio frequency; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586277
  • Filename
    586277