Title :
Ion optics of parallel scan implanter using two octupole deflectors
Author :
Tsukakoshi, Osamu ; Niikura, Kouichi ; Nishihashi, Tsutomu ; Mihara, Yasuo ; Sakurada, Yuzo
Author_Institution :
ULVAC Japan Ltd., Kanagawa, Japan
Abstract :
Ion optics of parallel scan type ion implanter using two geometrically similar octupoles are described. By ion optical analysis taking into account fringing effect of octupoles and checking up with experiment, it has become clear that the dose contour lines are concentric ellipses calculatable from dimensional parameters of the scanner composed of two octupoles. Parallel scan implanters up to 430 kev for 8-inch wafers have been successfully designed and manufactured based on this fact
Keywords :
ion implantation; ion optics; 430 keV; 8 inch; dose contour lines; fringing effect; ion optics; octupole deflector; parallel scan ion implanter; Bellows; Geometrical optics; Ion beams; Ion implantation; Manufacturing processes; Optical amplifiers; Particle beam optics; Physics; Power amplifiers; Probes;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586279
