Title :
Characterization of non-planar shadow masked AlxGa1-xAs structures by confocal photoluminescence microscopy
Author :
Sandusky, J.V. ; Armour, E.A. ; Ramer, J.C. ; Hersee, S.D. ; Brueck, S.R.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Confocal photoluminescence has been used to spatially resolve AlGaAs composition changes of 4% and quantum well thickness reductions of 70% in a non-planar structure created by vapor phase epitaxial shadow masking
Keywords :
photoluminescence; AlGaAs; AlGaAs composition changes; confocal photoluminescence microscopy; nonplanar shadow masked AlxGa1-xAs structures; quantum well thickness reductions; vapor phase epitaxial shadow masking; Apertures; Electrons; Gallium arsenide; Length measurement; Microscopy; Photoluminescence; Solids; Spatial resolution; Sun;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586280
