DocumentCode
348110
Title
Modeling yield throughout the DRAM product life cycle
Author
Simmons, Steven
Author_Institution
Micron Technol. Inc., Boise, ID, USA
fYear
1999
fDate
1999
Firstpage
123
Lastpage
126
Abstract
This paper presents a modeling technique for predicting DRAM die-per-wafer yield throughout a product´s fabrication life cycle. Using manufacturing yield data, it is shown that an accurate mature yield prediction for a wide range of product types can be made by modifying the standard Poisson yield model to account for defect clustering, minimum dimension, and process complexity. It is also shown that an invariable learning factor can be derived using a learning curve equation based on average fabrication cycle time. This derivation leads to an accurate yield forecast through time
Keywords
DRAM chips; Poisson distribution; fault diagnosis; integrated circuit modelling; integrated circuit yield; DRAM die-per-wafer yield; DRAM product life cycle; Poisson yield model; average fabrication cycle time; defect clustering; invariable learning factor; learning curve equation; manufacturing yield data; minimum dimension; process complexity; scaled Poisson model; yield modeling; Fabrication; History; Integrated circuit modeling; Integrated circuit yield; Predictive models; Profitability; Random access memory; Semiconductor device modeling; Testing; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808753
Filename
808753
Link To Document