• DocumentCode
    348110
  • Title

    Modeling yield throughout the DRAM product life cycle

  • Author

    Simmons, Steven

  • Author_Institution
    Micron Technol. Inc., Boise, ID, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    This paper presents a modeling technique for predicting DRAM die-per-wafer yield throughout a product´s fabrication life cycle. Using manufacturing yield data, it is shown that an accurate mature yield prediction for a wide range of product types can be made by modifying the standard Poisson yield model to account for defect clustering, minimum dimension, and process complexity. It is also shown that an invariable learning factor can be derived using a learning curve equation based on average fabrication cycle time. This derivation leads to an accurate yield forecast through time
  • Keywords
    DRAM chips; Poisson distribution; fault diagnosis; integrated circuit modelling; integrated circuit yield; DRAM die-per-wafer yield; DRAM product life cycle; Poisson yield model; average fabrication cycle time; defect clustering; invariable learning factor; learning curve equation; manufacturing yield data; minimum dimension; process complexity; scaled Poisson model; yield modeling; Fabrication; History; Integrated circuit modeling; Integrated circuit yield; Predictive models; Profitability; Random access memory; Semiconductor device modeling; Testing; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-5403-6
  • Type

    conf

  • DOI
    10.1109/ISSM.1999.808753
  • Filename
    808753