DocumentCode
348111
Title
Metal rework yield loss-mechanisms and solutions
Author
Shields, Jcffrcy A. ; Ko, Kclwin ; Rios, Rosalinda ; Mercado, Lcobardo
Author_Institution
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
1999
fDate
1999
Firstpage
143
Lastpage
146
Abstract
Metal mask rework has been demonstrated to have a dramatic effect on product yield. We have undertaken an exhaustive study to determine the mechanisms behind the yield loss and to develop a benign metal mask rework solution. We have identified two separate mechanisms for potential yield loss associated with metal mask rework; copper precipitation from high temperature plasma strip and chemical penetration of thin TiN ARC layers
Keywords
masks; TiN ARC layer; chemical penetration; copper precipitation; high temperature plasma strip; metal mask rework; product yield loss; semiconductor process technology; Aluminum alloys; Artificial intelligence; Copper alloys; Displays; Etching; Heating; Resists; Solids; Strips; Titanium alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808758
Filename
808758
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