Visible to near-infrared emission from a porous silicon device

Author

Penczek, J. ; Chao, I. Wen ; Smith, R.L. ; Knoesen, A. ; Davis, J.E. ; Lee, H.W.H.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

13

Abstract

Visible to near-infrared light emission is produced from a porous silicon device under current injection. The visible component appears bright red-orange, and is clearly observed even with room light. The room temperature photoluminescence (PL) spectrum of the porous silicon layer peaks in the red, whereas the electroluminescence (EL) spectrum is extremely broad and peaks in the near-infrared. This structure also exhibits a region of negative differential resistance. The porous silicon emitter is fabricated by initially diffusing phosphorous into a 9 Ω-cm p-type silicon wafer, creating 50 μm wide by 2.5 mm long n+/p junctions

Keywords

silicon; 2.5 mm; 50 mum; Si; current injection; electroluminescence; near-infrared emission; negative differential resistance; room light; room temperature photoluminescence; visible component; visible emission; Aluminum; Chaos; Electroluminescence; Etching; Hot carriers; Laboratories; Photoluminescence; Silicon devices; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586286

Filename

586286