Title :
Visible to near-infrared emission from a porous silicon device
Author :
Penczek, J. ; Chao, I. Wen ; Smith, R.L. ; Knoesen, A. ; Davis, J.E. ; Lee, H.W.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Visible to near-infrared light emission is produced from a porous silicon device under current injection. The visible component appears bright red-orange, and is clearly observed even with room light. The room temperature photoluminescence (PL) spectrum of the porous silicon layer peaks in the red, whereas the electroluminescence (EL) spectrum is extremely broad and peaks in the near-infrared. This structure also exhibits a region of negative differential resistance. The porous silicon emitter is fabricated by initially diffusing phosphorous into a 9 Ω-cm p-type silicon wafer, creating 50 μm wide by 2.5 mm long n+/p junctions
Keywords :
silicon; 2.5 mm; 50 mum; Si; current injection; electroluminescence; near-infrared emission; negative differential resistance; room light; room temperature photoluminescence; visible component; visible emission; Aluminum; Chaos; Electroluminescence; Etching; Hot carriers; Laboratories; Photoluminescence; Silicon devices; Temperature; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586286
