Title :
Porous silicon light emitting diodes
Author :
Peng, C. ; Tsybeskov, L. ; Duttagupta, S.P. ; Kurinec, S.K. ; Fauchet, P.M.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
The authors report the results of a systematic study of light-emitting devices made of porous silicon. The threshold for detectable electroluminescence is 5 V, the external efficiency reaches 0.01% at larger voltages and the LED output is stable for more than 100 hours of operation
Keywords :
silicon; 0.01 percent; 100 h; 5 V; LED output; Si; electroluminescence; external efficiency; light emitting diodes; Light emitting diodes; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586287
