DocumentCode
3481235
Title
Photo- and electroluminescence in porous silicon
Author
Lang, Walter
Author_Institution
Fraunhofer-Inst. for Solid State Technol., Munich, Germany
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
17
Abstract
When silicon is electrochemically etched in HF, a highly porous film, known as porous silicon, is generated. This material has very small silicon structures with sizes in the region of 3-5 nm, which are covered with hydrogen and oxygen. While bulk silicon as an indirect semiconductor, is not luminescent, the porous silicon shows bright photoluminescence. Since this was discovered in 1990, porous silicon has become one of the most intensely studied materials. The author discusses the photoluminescence and electroluminescence of porous silicon
Keywords
silicon; Si; bright photoluminescence; electroluminescence; indirect semiconductor; photoluminescence; porous Si; porous film; Electroluminescence; Electroluminescent devices; Etching; Luminescence; Nanoporous materials; Optical materials; Optical surface waves; Semiconductor materials; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586288
Filename
586288
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