• DocumentCode
    3481235
  • Title

    Photo- and electroluminescence in porous silicon

  • Author

    Lang, Walter

  • Author_Institution
    Fraunhofer-Inst. for Solid State Technol., Munich, Germany
  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    17
  • Abstract
    When silicon is electrochemically etched in HF, a highly porous film, known as porous silicon, is generated. This material has very small silicon structures with sizes in the region of 3-5 nm, which are covered with hydrogen and oxygen. While bulk silicon as an indirect semiconductor, is not luminescent, the porous silicon shows bright photoluminescence. Since this was discovered in 1990, porous silicon has become one of the most intensely studied materials. The author discusses the photoluminescence and electroluminescence of porous silicon
  • Keywords
    silicon; Si; bright photoluminescence; electroluminescence; indirect semiconductor; photoluminescence; porous Si; porous film; Electroluminescence; Electroluminescent devices; Etching; Luminescence; Nanoporous materials; Optical materials; Optical surface waves; Semiconductor materials; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586288
  • Filename
    586288