Abstract :
Very high quality GaAs is routinely grown via molecular beam epitaxy (MBE) under the following growth conditions: substrate temperature (Ts)=600°C, As/Ga flux ratio≈10:1 and growth rate=1 μm/hr. It also is possible to grow crystalline GaAs by MBE under the conditions above except for Ts=200 °C. The author summarizes important physical constants for the annealed low temperature (LT) GaAs, using normal MBE GaAs for comparison. The properties of LT GaAs can be varied greatly by changing the growth and annealing parameters. LT growth has been extended to a number of other III-V materials including AlGaAs, InGaAs, InAlAs, GaP and InGaP
