Title :
Ultrafast carrier lifetime in low-temperature grown GaAs, InP and InGaP
Author :
Kostoulas, Y. ; Ucer, K.B. ; Waxer, L. ; Wicks, G.W. ; Walmsley, La ; Fauchet, P.M.
Author_Institution :
Rochester Univ., NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
The authors performed a series of up-conversion and pump-probe measurements on InP and InGaP grown at 200°C and 300°C. The optical response of these materials is found to be qualitatively the same in spite of their different electronic properties and is similar to what has also been observed in the case of LT-GaAs. The lifetime of carriers in InP is found to be 500 fs for a growth temperature of 200°C and 1.6 ps if the growth takes place at 300°C. A fast carrier relaxation is observed in LT-InP which is due to carrier-carrier scattering followed by induced absorption which may be associated with lattice heating
Keywords :
carrier lifetime; 200 C; 300 C; GaAs; InGaP; InP; carrier lifetime; carrier-carrier scattering; electronic properties; fast carrier relaxation; growth temperature; induced absorption; lattice heating; optical response; pump-probe measurements; ultrafast carrier lifetime; up-conversion measurements; Absorption; Charge carrier lifetime; Gallium arsenide; Indium phosphide; Optical materials; Optical pumping; Optical scattering; Performance evaluation; Temperature; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586291
