Title :
Electrical characteristic of thin film FET under temperature and Gpa order stress
Author :
Tieying Ma ; Huiquan Wang ; Yidong Liu ; Junyi Yang ; She Ping Yan ; Zhonghe Jin ; Pei Liang
Author_Institution :
Micro-satellite Res. Center, Zhejiang Univ., Hangzhou, China
fDate :
Aug. 29 2012-Sept. 1 2012
Abstract :
In this paper, thin film FET has been fabricated at the root of a beam, where is the maximum stress area when the beam bended. Probe has been used to bend the beam and produce large mechanical stress, which is in Gpa order. Electrical characteristic of thin film FET under GPa stress and different temperature has been studied. The maximum ΔIDS/IDS at Gpa stress is up to -31.35%. The device stopped work when 100°C temperature and 1.75Gpa stress applied. A “mutation point” at 2.4 V at output curve of the FET after released has been observed.
Keywords :
field effect transistors; thin film transistors; Gpa stress; electrical characteristic; maximum stress area; mechanical stress; output curve; pressure 1.75 GPa; temperature 100 degC; thin film FET; Field effect transistors; Logic gates; Piezoresistance; Silicon; Stress; Temperature; Gpa stress; temperature; thin film FET;
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on
Conference_Location :
Shaanxi
Print_ISBN :
978-1-4673-4588-0
Electronic_ISBN :
978-1-4673-4589-7
DOI :
10.1109/3M-NANO.2012.6472983
