Electrical characteristic of thin film FET under temperature and Gpa order stress

Author

Tieying Ma ; Huiquan Wang ; Yidong Liu ; Junyi Yang ; She Ping Yan ; Zhonghe Jin ; Pei Liang

Author_Institution

Micro-satellite Res. Center, Zhejiang Univ., Hangzhou, China

fYear

2012

fDate

Aug. 29 2012-Sept. 1 2012

Firstpage

240

Lastpage

243

Abstract

In this paper, thin film FET has been fabricated at the root of a beam, where is the maximum stress area when the beam bended. Probe has been used to bend the beam and produce large mechanical stress, which is in Gpa order. Electrical characteristic of thin film FET under GPa stress and different temperature has been studied. The maximum ΔI_DS/I_DS at Gpa stress is up to -31.35%. The device stopped work when 100°C temperature and 1.75Gpa stress applied. A “mutation point” at 2.4 V at output curve of the FET after released has been observed.

Keywords

field effect transistors; thin film transistors; Gpa stress; electrical characteristic; maximum stress area; mechanical stress; output curve; pressure 1.75 GPa; temperature 100 degC; thin film FET; Field effect transistors; Logic gates; Piezoresistance; Silicon; Stress; Temperature; Gpa stress; temperature; thin film FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on

Conference_Location

Shaanxi

Print_ISBN

978-1-4673-4588-0

Electronic_ISBN

978-1-4673-4589-7

Type

conf

DOI

10.1109/3M-NANO.2012.6472983

Filename

6472983