Title :
2-D electro-optic sampling in GaAs photoconductive switches
Author :
Donaldson, W. ; Jacobs-Perkins, D. ; Hsiang, Thomas
Author_Institution :
Lab. for Laser Energetics, Rochester Univ., NY
fDate :
31 Oct-3 Nov 1994
Abstract :
The electro-optic imaging system has been used to observe the dynamics of photoconductive switching in GaAs. GaAs has two distinct regions of operation. At biases below 3-6 kV/cm (depending on material preparation) the switches behave in a simple fashion. The field collapses with the integral of the absorbed light and then recovers as the carriers recombine. Above 6 kV/cm the electric field across the switches exhibit transient anomalies. This technique could also be used for other semiconductor devices such as integrated circuits
Keywords :
gallium arsenide; GaAs; absorbed light; carrier recombination; dynamics; electric field; electro-optic imaging system; electro-optic sampling; field collapse; integrated circuits; photoconductive switches; semiconductor devices; transient anomalies; Gallium arsenide; Photoconductivity; Sampling methods;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586293
