DocumentCode
3481405
Title
Growth and properties of GaN films
Author
Moustakas, T.D.
Author_Institution
Boston Univ., MA, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
25
Abstract
A comprehensive study on the growth and properties of GaN films is presented. The films were grown by the electron cyclotron resonance microwave plasma assisted MBE method. The heteroepitaxial growth was carried out on a variety of substrates in two temperature steps in order to separate the nucleation and growth phases. The transport, optical and photoluminescence properties of GaN are discussed
Keywords
gallium compounds; GaN; GaN films; electron cyclotron resonance microwave plasma assisted MBE method; growth; growth phases; heteroepitaxial growth; nucleation; optical properties; photoluminescence properties; transport properties; Cyclotrons; Electrons; Gallium nitride; Microwave theory and techniques; Molecular beam epitaxial growth; Optical films; Plasma properties; Plasma temperature; Plasma transport processes; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586294
Filename
586294
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