DocumentCode
3481477
Title
Interferometric imaging technique for nondestructive evaluation of optoelectronic devices and wafers
Author
Hall, D.C.
Author_Institution
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
31
Abstract
A versatile, non-destructive interferometric optical characterization technique can be applied to broad-area optoelectronic devices or wafers at various processing stages to detect stress defects, and heteroepitaxial material, thermal bond, or current injection nonuniformities
Keywords
optoelectronic devices; broad-area optoelectronic devices; current injection nonuniformities; heteroepitaxial material; interferometric imaging technique; non-destructive interferometric optical characterization; nondestructive evaluation; optoelectronic devices; optoelectronic wafers; processing stages; stress defects; thermal bond; Optical amplifiers; Optical distortion; Optical imaging; Optical interferometry; Optical waveguides; Optoelectronic devices; Phase detection; Phase distortion; Probes; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586299
Filename
586299
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