Title :
Interferometric imaging technique for nondestructive evaluation of optoelectronic devices and wafers
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
A versatile, non-destructive interferometric optical characterization technique can be applied to broad-area optoelectronic devices or wafers at various processing stages to detect stress defects, and heteroepitaxial material, thermal bond, or current injection nonuniformities
Keywords :
optoelectronic devices; broad-area optoelectronic devices; current injection nonuniformities; heteroepitaxial material; interferometric imaging technique; non-destructive interferometric optical characterization; nondestructive evaluation; optoelectronic devices; optoelectronic wafers; processing stages; stress defects; thermal bond; Optical amplifiers; Optical distortion; Optical imaging; Optical interferometry; Optical waveguides; Optoelectronic devices; Phase detection; Phase distortion; Probes; Thermal stresses;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586299
