• DocumentCode
    3481485
  • Title

    The bonding of LiNbO3-silicon via BCB material

  • Author

    Jin Cheng ; Weiguo Liu ; Huan Liu

  • Author_Institution
    Micro-Optoelectron. Syst. Labs., Xi´´an Technol. Univ., Xi´´an, China
  • fYear
    2012
  • fDate
    Aug. 29 2012-Sept. 1 2012
  • Firstpage
    399
  • Lastpage
    401
  • Abstract
    Adhesive wafer bonding is a bonding approach using an intermediate layer for bonding (e.g. glass, polymers, resists, polyimides). This paper presents results on adhesive bonding using spin-on Benzocyclobutene(BCB) from Dow Chemicals. The advantages of using adhesive bonding for MEMS applications will be illustrated by presenting a technology of fabricating LiNbO3-on-Si substrates. By changing the rotational speed of spin coating and BCB thickness, bonding temperature, hold temperature, bonding pressure, and other parameters, we carried out a series of process optimization experiment. Finally the bonding shear strength was tested. The results show that LiNbO3 and silicon has a good bonding strength under the bonding conditions at 200°C. This process will allow us the hybrid integrated manufacturing of SAW devices.
  • Keywords
    adhesive bonding; elemental semiconductors; lithium compounds; mechanical testing; shear strength; silicon; spin coating; wafer bonding; BCB material; BCB thickness; LiNbO3-Si; LiNbO3-on-Si substrates; MEMS applications; SAW devices; adhesive wafer bonding; bonding pressure; bonding shear strength; bonding temperature; hold temperature; hybrid integrated manufacturing; intermediate layer; optimization; rotational speed; spin coating; spin-on benzocyclobutene; temperature 200 degC; Bonding; Curing; Heating; Qualifications; Silicon; Surface acoustic wave devices; BCB; LiNbO3; Silicon; bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on
  • Conference_Location
    Shaanxi
  • Print_ISBN
    978-1-4673-4588-0
  • Electronic_ISBN
    978-1-4673-4589-7
  • Type

    conf

  • DOI
    10.1109/3M-NANO.2012.6472990
  • Filename
    6472990