• DocumentCode
    3481498
  • Title

    LINAC simulation for high energy ion implantation

  • Author

    Wan, Zhimin ; Saadatmand, Kourosh ; Sinclair, Frank ; Lysenko, Walter ; Rusnak, Brian ; Young, Lloyd

  • Author_Institution
    Semicond. Equipment Oper., Eaton Corp., Beverly, MA, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    371
  • Lastpage
    374
  • Abstract
    RF linear accelerators (LINACs) are routinely used to accelerate ions to few hundreds of MeV in high energy physics accelerators. When this technology is applied to high energy ion implantation for semiconductor device fabrication, parameters such as high transmission, low energy spread, and small beam emittance must be preserved over a wide range of energies and masses. We have modified a particle tracking code, PARMELA (Phase and Radial Motion in Electron Linear Accelerators), to allow the investigation and optimization of the beam characteristics of Eaton´s rf LINAC. We present the main principles of this simulation and show several examples of beam propagation studies (e,g., effects of beam bunching, beam emittance, mechanical alignment, and other factors on beam transmission), In a typical simulation of the accelerator in Eaten´s NVGSD/HE ion implanter, which has 10 individual rf drift tube resonators, we have found that ion beam bunching occurs in the first few rf drift tubes. Bunched ions are accelerated and transported through the accelerator. For the other ions, most of them are lost because they strike the walls of rf drift tubes and focusing electrostatic quadrupoles along the accelerator. These transmission loss mechanisms increase monotonically with increased beam current, which eventually limits the maximum output current
  • Keywords
    beam handling techniques; ion accelerators; ion implantation; LINAC simulation; NVGSD/HE ion implanter; PARMELA; RF linear accelerator; beam bunching; beam current; beam emittance; beam propagation; drift tube resonator; energy spread; focusing electrostatic quadrupole; high energy ion implantation; mechanical alignment; optimization; particle tracking code; semiconductor device fabrication; transmission loss; Acceleration; Fabrication; Ion accelerators; Ion implantation; Linear accelerators; Linear particle accelerator; Particle accelerators; Particle beams; Radio frequency; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586300
  • Filename
    586300