DocumentCode
3481498
Title
LINAC simulation for high energy ion implantation
Author
Wan, Zhimin ; Saadatmand, Kourosh ; Sinclair, Frank ; Lysenko, Walter ; Rusnak, Brian ; Young, Lloyd
Author_Institution
Semicond. Equipment Oper., Eaton Corp., Beverly, MA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
371
Lastpage
374
Abstract
RF linear accelerators (LINACs) are routinely used to accelerate ions to few hundreds of MeV in high energy physics accelerators. When this technology is applied to high energy ion implantation for semiconductor device fabrication, parameters such as high transmission, low energy spread, and small beam emittance must be preserved over a wide range of energies and masses. We have modified a particle tracking code, PARMELA (Phase and Radial Motion in Electron Linear Accelerators), to allow the investigation and optimization of the beam characteristics of Eaton´s rf LINAC. We present the main principles of this simulation and show several examples of beam propagation studies (e,g., effects of beam bunching, beam emittance, mechanical alignment, and other factors on beam transmission), In a typical simulation of the accelerator in Eaten´s NVGSD/HE ion implanter, which has 10 individual rf drift tube resonators, we have found that ion beam bunching occurs in the first few rf drift tubes. Bunched ions are accelerated and transported through the accelerator. For the other ions, most of them are lost because they strike the walls of rf drift tubes and focusing electrostatic quadrupoles along the accelerator. These transmission loss mechanisms increase monotonically with increased beam current, which eventually limits the maximum output current
Keywords
beam handling techniques; ion accelerators; ion implantation; LINAC simulation; NVGSD/HE ion implanter; PARMELA; RF linear accelerator; beam bunching; beam current; beam emittance; beam propagation; drift tube resonator; energy spread; focusing electrostatic quadrupole; high energy ion implantation; mechanical alignment; optimization; particle tracking code; semiconductor device fabrication; transmission loss; Acceleration; Fabrication; Ion accelerators; Ion implantation; Linear accelerators; Linear particle accelerator; Particle accelerators; Particle beams; Radio frequency; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586300
Filename
586300
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