Title :
Noninvasive optical characterization of Ohmic contacts
Author :
Biernacki, P. ; Lee, H. ; Mickelson, A.R. ; Castagne, M. ; Bradbury, E. ; Gall, P. ; Fillard, J.P.
Author_Institution :
Colorado Univ., Boulder, CO, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Preliminary results indicate that asymmetries present in the electrooptic sampling data may correspond to defect clusters created in the Ohmic contact process region and also possibly due to the crystal defect regions present in the bulk GaAs wafer. Thus it may be possible to correlate defects produced in the contact process with their related local electrical perturbations. These results are in agreement with earlier results
Keywords :
gallium arsenide; GaAs; Ohmic contact process region; Ohmic contacts; bulk GaAs wafer; contact process; crystal defect regions; defect clusters; electrooptic sampling data; local electrical perturbations; noninvasive optical characterization; Coplanar waveguides; Electrooptic devices; Gallium arsenide; Image reconstruction; Image sampling; Lasers and electrooptics; Ohmic contacts; Optical mixing; Optical scattering; Signal processing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586301
