DocumentCode :
3481620
Title :
Device simulation of pentacene based organic field-effect transistors
Author :
Qiu, H. ; Wilke, B. ; Göbel, H.
Author_Institution :
Dept. of Electron., Helmut-Schmidt-Univ./Univ. of the Fed. Armed Forces, Hamburg
fYear :
2008
fDate :
17-20 Aug. 2008
Firstpage :
1
Lastpage :
4
Abstract :
In this paper we describe the major modifications, which have to be applied to a drift diffusion device simulator in order to simulate the electrical as well as the temperature behaviour of organic FETs (OFETs). In particular we use a charge carrier mobility which depends on the electric field and on the temperature. These modifications have been implemented in a device simulator developed by the author, which is based on a two dimensional drift-diffusion-model and which solves the static semiconductor equations. We demonstrate that this modification suffices for a good agreement between simulation and measurement.
Keywords :
electric fields; organic field effect transistors; OFET; charge carrier mobility; device simulator; electric fields; pentacene based organic field-effect transistors; static semiconductor equations; two dimensional drift-diffusion-model; Charge carrier mobility; Chemical vapor deposition; Equations; FETs; Gold; OFETs; Organic semiconductors; Pentacene; Temperature dependence; Temperature measurement; OFET; device simulator; electric field; mobility; simulation; temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Portable Information Devices, 2008 and the 2008 7th IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics. PORTABLE-POLYTRONIC 2008. 2nd IEEE International Interdisciplinary Conference on
Conference_Location :
Garmish-Partenkirchen
Print_ISBN :
978-1-4244-2141-1
Electronic_ISBN :
978-1-4244-2142-8
Type :
conf
DOI :
10.1109/PORTABLE-POLYTRONIC.2008.4681295
Filename :
4681295
Link To Document :
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