DocumentCode :
3481647
Title :
Reliability analysis of RGB LED on low-temperature thermo-mechanical coupling field
Author :
Yu Guo ; Kailin Pan ; Shujing Chen ; Fei Yuan ; Tao Lu
Author_Institution :
Sch. of Mech. & Electr. Eng., Guilin Univ. of Electron. Technol., Guilin, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
1099
Lastpage :
1103
Abstract :
LED with many advantages such as high brightness, long-lifetime, and energy-saving has been successfully applied to various fields, especially on special lighting applications. At low temperatures, LED is more uniform in illumination and has a higher luminous efficiency, which is regarded as the next generation refrigeration system lighting. As well as in some cold regions, LED has also become the main source of lighting. However, in the actual circumstances of low temperature, the scope of LED lighting is limited to a great many of reliability problems. Accounting to the issues above, the comparative analysis between RGB LED which has a better performance on photoelectric properties and common GaN-based LED based on the finite element method will be taken in this paper. With ANSYS software, the temperature distribution in the multi-physics low temperature coupling field can be attained between chips with different epitaxial materials and the internal structure of LED, further on the corresponding VONMEIS equivalent stress and strain of major components in LED. So that inferring the failure modes and failure mechanisms of RGB LED in low thermal mechanical coupling field. The following conclusions will be found, in the ambient temperature changing process, the temperature of components changes linearly along with the temperature gradient when it reaches a steady state. The location of the max stress and the max strain is the corners of the surface between Die attach layer and Slug, the relationship between stress, strain and temperature is a non-linear function. In the RGB LED, the thermal stress gradient of the substrate and Die attach layer are large, which is prone to fatigue damage to the main reason. Meanwhile, the reliability of green and blue chip are better than red chip. Based on the results of this paper, some methods will be proposed to improve the reliability of RGB LED.
Keywords :
III-V semiconductors; failure analysis; finite element analysis; gallium compounds; light emitting diodes; lighting; microassembling; nonlinear functions; reliability; stress-strain relations; temperature distribution; wide band gap semiconductors; ANSYS software; GaN; LED lighting; RGB LED reliability analysis; VONMEIS equivalent stress-strain relation; ambient temperature changing process; die attach layer; energy-saving; epitaxial materials; failure mechanisms; finite element method; low-temperature thermo-mechanical coupling field; luminous efficiency; multiphysics low temperature coupling field; nonlinear function; photoelectric properties; slug; temperature distribution; thermal stress gradient; Light emitting diodes; Lighting; Microassembly; Reliability; Strain; Stress; Temperature distribution; Low temperature; RGB-LED; Reliability; Therml-mechanical copuling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756650
Filename :
6756650
Link To Document :
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