Title :
Fast LIGBT switching due to plasma confinement through pulse width control
Author :
Wacyk, Ihor ; Jayaraman, Raj ; Casey, Leo ; Sin, Johnny
Author_Institution :
Philips Lab., Briarcliff Manor, NY, USA
Abstract :
The authors have examined the initial turn-on dynamics of the LIGBT (lateral insulated gate bipolar transistor) and shown through data and simulations that the LIGBT achieves effective conductivity modulation within approximately 200 ns of turn-on. At this time, the parasitic vertical PNP is saturated and the on-voltage has virtually reached a minimum. Beyond 200 ns, it is shown that only a marginal improvement in the on-voltage is obtained and at substantial cost in terms of switching speed. This observation was exploited by implementing a constant on-time PWM up-converter operating with 94% efficiency at 200 kHz. This demonstrated viable LIGBT operation at a frequency well above the range that conventional wisdom suggests
Keywords :
equivalent circuits; insulated gate bipolar transistors; power convertors; power transistors; pulse width modulation; semiconductor device models; semiconductor switches; switching; 200 kHz; 94 percent; PWM up-converter; conductivity modulation; initial turn-on dynamics; insulated gate bipolar transistor; lateral IGBT; plasma confinement; pulse width control; simulations; switching speed; Anodes; Frequency conversion; Insulated gate bipolar transistors; Plasma confinement; Plasma devices; Plasma properties; Power integrated circuits; Space vector pulse width modulation; Switches; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146076
