Title :
Fabrication and performance characteristics of InGaAs lasers emitting near 980 nm
Author :
Hobson, W. ; Nichols, D.T. ; Lopata, J. ; Chand, N. ; Schubert, E.F. ; Passlack, M. ; Dutta, N.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
The laser structure shown is of the ridge waveguide type. The epitaxial layers are grown over a (100) oriented GaAs substrate using MOCVD growth technique. These layers are 1.8 μm thick n-InGaP cladding layer, the active region consisting of 80 A wide single InGaAs well bounded by 1000 A thick GaAs cladding layers, 1000 A InGaP layer, 70 A GaAs etch stop layer, p-InGaP cladding layer and p-GaAs contact layer. The etch stop layer may be positioned with respect to the active layer to give precise control ofthe lateral mode properties
Keywords :
indium compounds; (100) oriented GaAs substrate; 1.8 mum; 1000 A; 70 A; 80 A; 980 nm; GaAs; GaAs etch stop layer; InGaAs; InGaAs lasers; InGaP; MOCVD growth; active layer; active region; epitaxial layers; etch stop layer; laser structure; lateral mode properties; n-InGaP cladding layer; p-GaAs contact layer; p-InGaP cladding layer; performance characteristics; ridge waveguide laser; single InGaAs well; thick GaAs cladding layers; Chemical lasers; Distributed feedback devices; Erbium-doped fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser feedback; Laser modes; Optical device fabrication; Pump lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586307
