Fabrication and performance characteristics of InGaAs lasers emitting near 980 nm

Author

Hobson, W. ; Nichols, D.T. ; Lopata, J. ; Chand, N. ; Schubert, E.F. ; Passlack, M. ; Dutta, N.K.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

45

Abstract

The laser structure shown is of the ridge waveguide type. The epitaxial layers are grown over a (100) oriented GaAs substrate using MOCVD growth technique. These layers are 1.8 μm thick n-InGaP cladding layer, the active region consisting of 80 A wide single InGaAs well bounded by 1000 A thick GaAs cladding layers, 1000 A InGaP layer, 70 A GaAs etch stop layer, p-InGaP cladding layer and p-GaAs contact layer. The etch stop layer may be positioned with respect to the active layer to give precise control ofthe lateral mode properties

Keywords

indium compounds; (100) oriented GaAs substrate; 1.8 mum; 1000 A; 70 A; 80 A; 980 nm; GaAs; GaAs etch stop layer; InGaAs; InGaAs lasers; InGaP; MOCVD growth; active layer; active region; epitaxial layers; etch stop layer; laser structure; lateral mode properties; n-InGaP cladding layer; p-GaAs contact layer; p-InGaP cladding layer; performance characteristics; ridge waveguide laser; single InGaAs well; thick GaAs cladding layers; Chemical lasers; Distributed feedback devices; Erbium-doped fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser feedback; Laser modes; Optical device fabrication; Pump lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586307

Filename

586307