Reliability of semiconductor lasers optical fiber transmission systems

Author

Fukuda, Mitsuo

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

51

Abstract

Semiconductor lasers have recently been applied to various kinds of optical fiber transmission systems as transmitter sources or pumping sources for optical fiber amplifiers. These lasers have a wide range of characteristics and structures corresponding to the application fields. The most degradation mechanisms, however, originate from their surfaces or interfaces. In this paper, the reliabilities of 0.98 μm pumping sources, 1.3 and 1.55 μm strained MQW InGaAsP/lnP lasers buried by semi-insulating iron-doped InP, and 1.55 μm (strained) InGaAsP/lnP MQW DFB lasers for d-WDM are discussed from the viewpoint of the surface-or interface-related problems

Keywords

semiconductor lasers; 0.98 mum; 1.3 mum; 1.55 mum; InGaAsP-InP; InGaAsP/lnP lasers; MQW DFB lasers; degradation mechanisms; interfaces; optical fiber amplifiers; optical fiber transmission systems; pumping sources; reliability; semiconductor lasers; strained MQW lasers; surfaces; transmitter sources; wavelength division multiplexing; Degradation; Fiber lasers; Laser excitation; Optical fiber amplifiers; Optical fibers; Optical transmitters; Pump lasers; Quantum well devices; Semiconductor device reliability; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586309

Filename

586309