Title :
Current trends in the electrical characterization of low-k dielectrics
Author :
Ionescu, A.M. ; Reimbold, G. ; Mondon, F.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
In this paper, current trends in the electrical characterization of low-k dielectrics for advanced interconnects, are presented. Emphasis is given to the study of moisture induced degradation and to the thermal effects in embedded interconnect architectures. The experimental results prove the necessity to provide new design guidelines for sub-0.25 μm interconnects
Keywords :
VLSI; dielectric thin films; environmental stress screening; integrated circuit interconnections; integrated circuit reliability; leakage currents; permittivity; reviews; advanced interconnects; design guidelines; electrical characterization; embedded interconnect architecture; leakage currents; low-k dielectrics; moisture induced degradation; multilevel test structures; thermal conductivity; thermal effects; wafer level characterization; CMOS technology; Conducting materials; Dielectric materials; Dielectric measurements; Dielectrics and electrical insulation; Inorganic materials; Integrated circuit interconnections; Organic materials; Permittivity; Thermal degradation;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810382
