Title :
A preliminary study on VDMOS and IGBT encapsulation, reliability and lifetime killing
Author :
Badila, M. ; Jorda, Xavier ; Millan, James ; Godignon, Ph. ; Banu, V. ; Brezeanu, Gh ; Spenea, M. Udrea ; Staicu, Liliana ; Iliescu, Elena ; Bazu, M. ; Codreanu, Cecilia
Author_Institution :
IMT Bucharest, Romania
Abstract :
A comparative study on medium voltage VDMOS and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. Consequently, the VDMOS structures were used as test vehicle for encapsulation, reliability and lifetime killing studies. It was found that the base material characteristics play a main role in the encapsulation yield and assure better reliability capability. The electron irradiation assures an effective and perfect controllable lifetime killing with adjacent threshold voltage reduction and breakdown voltage increasing
Keywords :
carrier lifetime; electron beam effects; encapsulation; insulated gate bipolar transistors; plastic packaging; power MOSFET; power bipolar transistors; semiconductor device breakdown; semiconductor device packaging; semiconductor device reliability; IGBT; VDMOS; adjacent threshold voltage reduction; base material characteristics; breakdown voltage increase; device similarity; electrical characteristics; electron irradiation; encapsulation yield; internal cell; lifetime killing; medium voltage; reliability; Electric variables; Electrons; Encapsulation; Insulated gate bipolar transistors; Life testing; Materials reliability; Medium voltage; Threshold voltage; Vehicles; Voltage control;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810386
