DocumentCode :
3481735
Title :
PSpice model for hysteresis in pentacene field-effect transistors
Author :
Ucurum, C. ; Siemund, H. ; Goebel, H.
Author_Institution :
Dept. of Electron., Helmut Schmidt Univ., Hamburg
fYear :
2008
fDate :
17-20 Aug. 2008
Firstpage :
1
Lastpage :
3
Abstract :
A PSpice model for hysteresis in pentacene field-effect transistors (FETs) is introduced. The model is based on the charge trap related threshold voltage shift in organic FETs (OFETs). The validity of the model is shown through the comparison of PSpice simulations with both static and transient measurements.
Keywords :
SPICE; hysteresis; organic field effect transistors; PSpice simulations; charge trap; hysteresis; organic FET; pentacene field-effect transistors; static measurements; threshold voltage shift; transient measurement; Atmospheric measurements; Circuit simulation; Current measurement; FETs; Hysteresis; OFETs; Pentacene; Performance evaluation; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Portable Information Devices, 2008 and the 2008 7th IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics. PORTABLE-POLYTRONIC 2008. 2nd IEEE International Interdisciplinary Conference on
Conference_Location :
Garmish-Partenkirchen
Print_ISBN :
978-1-4244-2141-1
Electronic_ISBN :
978-1-4244-2142-8
Type :
conf
DOI :
10.1109/PORTABLE-POLYTRONIC.2008.4681301
Filename :
4681301
Link To Document :
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