Title :
The nature of photoluminescence excitation bands in porous silicon
Author :
Torchinskaya, T.V. ; Korsunskaya, N.E. ; Sheinkman, M.K. ; Khomenkova, L.Yu. ; Bulakh, B.M. ; Dzhumaev, B.R. ; Many, A. ; Goldstein, Y. ; Savir, E.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide
Keywords :
ageing; elemental semiconductors; photoluminescence; porous semiconductors; silicon; Si; aging; photoluminescence excitation spectra; porous silicon; ultraviolet band; visible band; Aging; Electromagnetic wave absorption; Infrared spectra; Photoluminescence; Physics; Potential well; Shape; Silicon; Wavelength measurement; Wires;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810441
