DocumentCode :
348182
Title :
Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures
Author :
Gorea, O. ; Korotcov, A. ; Malikova, L. ; Pollak, F.H.
Author_Institution :
Dept. of Phys., State Univ. of Moldova, Chisinau, Moldova
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
113
Abstract :
GaAs/GaAs1-xPx multiple quantum wells structures have been studied by modulation spectroscopy technique. From a detailed lineshape fit to the contactless electroreflectance and piezoreflectance data we have determined the unstrained conduction band offset parameter for x=0.29
Keywords :
III-V semiconductors; conduction bands; electroreflectance; gallium arsenide; modulation spectra; piezoreflectance; semiconductor quantum wells; GaAs-GaAsP; GaAs/GaAsP multiple quantum well; conduction band offset parameter; contactless electroreflectance; lineshape; modulation spectroscopy; piezoreflectance; Buffer layers; Capacitive sensors; Educational institutions; Gallium arsenide; Nonhomogeneous media; Optical modulation; Photonic band gap; Physics; Quantum well devices; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
Type :
conf
DOI :
10.1109/SMICND.1999.810442
Filename :
810442
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=348182
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