Title :
A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region
Author :
Cao, G. ; De Souza, M.M. ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technol. Res., Centr, De Montfort Univ., Leicester, UK
Abstract :
The superior performance of a new 60-V class lateral power MOSFET using a graded doping profile in the drift region has been demonstrated for the first time. A simple technique to achieve the graded doping profile for a 3.5 micron drift length extends the breakdown voltage capability of existing power devices in thin SOI (SIMOX) technology. Our detailed analysis reveals that a significant improvement in the on-state and capacitance-voltage performance is possible in comparison to a conventional uniformly doped device
Keywords :
SIMOX; doping profiles; power MOSFET; semiconductor device breakdown; 3.5 micron; 60 V; SIMOX; breakdown voltage capability; capacitance-voltage performance; drift region; graded doping profile; lateral power MOSFET; on-state performance; thin film SOI; uniformly doped device; Breakdown voltage; Capacitance-voltage characteristics; Doping profiles; Electronic mail; Lithography; MOSFET circuits; Medical simulation; Performance analysis; Power MOSFET; Transistors;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810444
