Title :
The influence of buried insulator type and film thickness on threshold voltage of a partially and fully depleted SOI-MOSFET
Author :
Ravariu, C. ; Rusu, A. ; Dobrescu, D. ; Dobrescu, Lidia ; Ravariu, Florina
Author_Institution :
Politehnica Univ. of Bucharest, Romania
Abstract :
Nowadays SOI technologies represent a milestone in the fabrication of devices and integrated systems on thin films. The analytical models for the threshold voltage are useful for many SOI devices. Our analysis has focused on partially and fully depleted films, achieved on insulators like oxide, nitride or oxinitride. This paper gives a simple and accurate estimation of the threshold voltage. The results were in a good agreement both with PISCES numerical simulations and with experimental data
Keywords :
MOSFET; buried layers; insulating thin films; semiconductor device models; silicon-on-insulator; Si; analytical model; buried insulator type; fully depleted SOI-MOSFET; insulator film thickness; nitride insulator; oxide insulator; oxinitride insulator; partially depleted SOI-MOSFET; threshold voltage; Analytical models; Dielectric substrates; Dielectrics and electrical insulation; Doping; Electric potential; MOSFET circuits; Numerical simulation; Semiconductor films; Silicon; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810453
