The influence of buried insulator type and film thickness on threshold voltage of a partially and fully depleted SOI-MOSFET

Author

Ravariu, C. ; Rusu, A. ; Dobrescu, D. ; Dobrescu, Lidia ; Ravariu, Florina

Author_Institution

Politehnica Univ. of Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

161

Abstract

Nowadays SOI technologies represent a milestone in the fabrication of devices and integrated systems on thin films. The analytical models for the threshold voltage are useful for many SOI devices. Our analysis has focused on partially and fully depleted films, achieved on insulators like oxide, nitride or oxinitride. This paper gives a simple and accurate estimation of the threshold voltage. The results were in a good agreement both with PISCES numerical simulations and with experimental data

Keywords

MOSFET; buried layers; insulating thin films; semiconductor device models; silicon-on-insulator; Si; analytical model; buried insulator type; fully depleted SOI-MOSFET; insulator film thickness; nitride insulator; oxide insulator; oxinitride insulator; partially depleted SOI-MOSFET; threshold voltage; Analytical models; Dielectric substrates; Dielectrics and electrical insulation; Doping; Electric potential; MOSFET circuits; Numerical simulation; Semiconductor films; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810453

Filename

810453