DocumentCode
348191
Title
Capabilities and limitations of semiconductor surge voltage suppressors
Author
Obreja, Vasile V N
Author_Institution
Nat. R&D Inst. for Microtechnol., Bucharest, Romania
Volume
1
fYear
1999
fDate
1999
Firstpage
169
Abstract
A short presentation and comparison of characteristics of the commercial available semiconductor transient voltage suppressors is carried out. Illustrative device electrical characteristics are shown, revealing that the silicon junction breakdown suppressors may have a superior overall technical performance, when are compared with silicon thyristor suppressors and metal-oxide varistors
Keywords
avalanche diodes; elemental semiconductors; power semiconductor devices; power system transient stability; semiconductor junctions; silicon; surge protection; Si; Si junction breakdown suppressors; capabilities; device electrical characteristics; limitations; metal-oxide varistors; semiconductor surge voltage suppressors; semiconductor transient voltage suppressors; thyristor suppressors; Breakdown voltage; Electric breakdown; Electric variables; Phase change random access memory; Research and development; Silicon devices; Solid state circuits; Surges; Thyristors; Varistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location
Sinaia
Print_ISBN
0-7803-5139-8
Type
conf
DOI
10.1109/SMICND.1999.810455
Filename
810455
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