Title :
Capabilities and limitations of semiconductor surge voltage suppressors
Author :
Obreja, Vasile V N
Author_Institution :
Nat. R&D Inst. for Microtechnol., Bucharest, Romania
Abstract :
A short presentation and comparison of characteristics of the commercial available semiconductor transient voltage suppressors is carried out. Illustrative device electrical characteristics are shown, revealing that the silicon junction breakdown suppressors may have a superior overall technical performance, when are compared with silicon thyristor suppressors and metal-oxide varistors
Keywords :
avalanche diodes; elemental semiconductors; power semiconductor devices; power system transient stability; semiconductor junctions; silicon; surge protection; Si; Si junction breakdown suppressors; capabilities; device electrical characteristics; limitations; metal-oxide varistors; semiconductor surge voltage suppressors; semiconductor transient voltage suppressors; thyristor suppressors; Breakdown voltage; Electric breakdown; Electric variables; Phase change random access memory; Research and development; Silicon devices; Solid state circuits; Surges; Thyristors; Varistors;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810455
