DocumentCode
348197
Title
TiO2-MOCVD thin films on large area macroporous silicon for capacitor applications
Author
Angelescu, Anca ; Kleps, Irina ; Battiston, G.A. ; Gerbasi, Rosalba ; Samfirescu, Narcis
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume
1
fYear
1999
fDate
1999
Firstpage
209
Abstract
The authors present results of the deposition and characterization of TiO2 thin films, prepared by low pressure metal organic chemical vapor deposition (MOCVD) at 400°C in an N2 or N 2/O2 atmosphere using titanium tetraisopropoxide as precursor. The electrical resistivity as a function of thermal treatment is reported and discussed in relation to the microstructure. The crystallographic structure and crystallite dimensions are determined by X-ray diffraction spectrometry. The application of TiO2 thin films as the dielectric layer for a capacitor on macroporous silicon is reported
Keywords
MIS structures; MOCVD; MOCVD coatings; MOS capacitors; X-ray diffraction; crystal microstructure; dielectric thin films; electric breakdown; electrical resistivity; elemental semiconductors; porous semiconductors; silicon; titanium compounds; 400 C; MIS structures; N2; N2 atmosphere; N2-O2; N2/O2 atmosphere; TiO2 MOCVD thin films; TiO2-Si; X-ray diffraction spectrometry; breakdown voltage; capacitor applications; crystallite dimensions; crystallographic structure; dielectric layer; electrical resistivity; large area macroporous Si; low pressure metal organic chemical vapor deposition; microstructure; thermal treatment; titanium tetraisopropoxide precursor; Atmosphere; Chemical vapor deposition; Dielectric thin films; Electric resistance; MOCVD; Microstructure; Organic chemicals; Sputtering; Thermal resistance; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location
Sinaia
Print_ISBN
0-7803-5139-8
Type
conf
DOI
10.1109/SMICND.1999.810464
Filename
810464
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