Investigation on oxygen implanted silicon by optical spectroscopy and RBS

Author

Bercu, M. ; Tate, T. ; Ivanov, E.

Author_Institution

Fac. of Phys., Bucharest Univ., Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

231

Abstract

This study is devoted both to the theory and experimental approach on optical reflectance spectra for the characterisation of oxygen implanted sample. The calculation of light reflected intensity from the silicon surface impurified by O+ ionic implantation has been carried out. The theoretical spectra were fitted to the experimental data in the frame of a parameter extraction procedure. The temperature activated redistribution and the formation of the buried oxide layer has been analysed in the frame of this approach. The depth and the width of the SiO₂ buried layer obtained has been compared with RBS data. A good agreement between two methods was obtained

Keywords

Rutherford backscattering; SIMOX; buried layers; elemental semiconductors; impurity distribution; ion implantation; oxygen; reflectivity; silicon; RBS; SIMOX structure; Si-SiO₂; Si:O; buried oxide layer; impurity redistribution; optical reflectance spectroscopy; oxygen implantation; parameter extraction; silicon surface; temperature activation; Annealing; Biomedical optical imaging; Optical refraction; Optical surface waves; Optical variables control; Oxygen; Reflectivity; Silicon; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810504

Filename

810504