Title :
Investigation on oxygen implanted silicon by optical spectroscopy and RBS
Author :
Bercu, M. ; Tate, T. ; Ivanov, E.
Author_Institution :
Fac. of Phys., Bucharest Univ., Romania
Abstract :
This study is devoted both to the theory and experimental approach on optical reflectance spectra for the characterisation of oxygen implanted sample. The calculation of light reflected intensity from the silicon surface impurified by O+ ionic implantation has been carried out. The theoretical spectra were fitted to the experimental data in the frame of a parameter extraction procedure. The temperature activated redistribution and the formation of the buried oxide layer has been analysed in the frame of this approach. The depth and the width of the SiO2 buried layer obtained has been compared with RBS data. A good agreement between two methods was obtained
Keywords :
Rutherford backscattering; SIMOX; buried layers; elemental semiconductors; impurity distribution; ion implantation; oxygen; reflectivity; silicon; RBS; SIMOX structure; Si-SiO2; Si:O; buried oxide layer; impurity redistribution; optical reflectance spectroscopy; oxygen implantation; parameter extraction; silicon surface; temperature activation; Annealing; Biomedical optical imaging; Optical refraction; Optical surface waves; Optical variables control; Oxygen; Reflectivity; Silicon; Spectroscopy; Temperature;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810504
