Title :
Experiments on radiation induced effects in the Si/SiO2 system
Author :
Codreanu, Cecilia ; Iliescu, Elena ; Badoiu, Aritina ; Dragan, M.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
This paper presents the results of an experimental study on MOS capacitor test structures with different oxide thickness and exposed to different irradiation conditions and post-irradiation annealing treatments. Test samples were fabricated on N-type silicon wafers of ⟨111⟩ orientation and 5-10 Ω cm resistivity. Irradiation was performed at different temperatures in a 7 MeV linear electron accelerator
Keywords :
MOS capacitors; annealing; electron beam effects; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; 7 MeV; MOS capacitor; Si-SiO2; Si/SiO2 interface; annealing; electron irradiation; Annealing; Electron accelerators; Laser theory; MOS capacitors; Physics; Plasma temperature; Radiation effects; Research and development; Silicon; Testing;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810506
