Title :
Some experimental and numerical investigations into the Two Roots Model on GaAs based diodes: giant hysteresis observed
Author :
Khan, W.I. ; Ishaque, M. ; Christina, T.
Author_Institution :
Dept. of Phys., Kuwait Univ., Safat, Kuwait
Abstract :
Some efforts have been made on GaAs based diodes for experimental and numerical investigations into the Two Roots Model. The dependence of the width of the hysteresis on the thermal annealing temperature shows effects of impurities. Finally the numerical simulation lead to the manifestation of the phase-diagram involved in the Two Roots Model
Keywords :
III-V semiconductors; annealing; gallium arsenide; hysteresis; semiconductor device models; semiconductor diodes; GaAs; GaAs diode; hysteresis; impurity; numerical simulation; phase diagram; thermal annealing; two roots model; Annealing; Doping; Gallium arsenide; Hysteresis; Light emitting diodes; Numerical simulation; Schottky diodes; Semiconductor diodes; Semiconductor impurities; Voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810512
