Title :
Current flow through a nonuniform metal-GaAs contact
Author :
Belyaev, A.A. ; Beketov, G.K. ; Chaika, G.E. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Rengevych, O.E. ; Soloviev, E.A. ; Voitsikhovskiy, D.I. ; Boltovets, N.S. ; Ivanov, V.N.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The current flow mechanisms were studied in the 77 to 395 K temperature range for the Au-TiB2-GaAs barrier structures, both initially nonuniform and annealed in the argon atmosphere for 60 s at 400 and 600°C. Their I-V curves substantially depend on the degree of structural-chemical uniformity of the active area
Keywords :
III-V semiconductors; annealing; gallium arsenide; gold; semiconductor-metal boundaries; titanium compounds; 400 C; 600 C; 77 to 395 K; Au-TiB2-GaAs; Au-TiB2-GaAs barrier structure; I-V characteristics; annealing; current flow; nonuniform metal-GaAs contact; structural-chemical uniformity; Annealing; Charge carriers; Electrons; Gallium arsenide; Physics; Radiative recombination; Temperature dependence; Temperature distribution; Tunneling; Voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810513
