• DocumentCode
    348209
  • Title

    Current flow through a nonuniform metal-GaAs contact

  • Author

    Belyaev, A.A. ; Beketov, G.K. ; Chaika, G.E. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Rengevych, O.E. ; Soloviev, E.A. ; Voitsikhovskiy, D.I. ; Boltovets, N.S. ; Ivanov, V.N.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    269
  • Abstract
    The current flow mechanisms were studied in the 77 to 395 K temperature range for the Au-TiB2-GaAs barrier structures, both initially nonuniform and annealed in the argon atmosphere for 60 s at 400 and 600°C. Their I-V curves substantially depend on the degree of structural-chemical uniformity of the active area
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; gold; semiconductor-metal boundaries; titanium compounds; 400 C; 600 C; 77 to 395 K; Au-TiB2-GaAs; Au-TiB2-GaAs barrier structure; I-V characteristics; annealing; current flow; nonuniform metal-GaAs contact; structural-chemical uniformity; Annealing; Charge carriers; Electrons; Gallium arsenide; Physics; Radiative recombination; Temperature dependence; Temperature distribution; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810513
  • Filename
    810513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348209