Title :
A new type of monolithic broadband frequency doubler by using an array of pseudomorphic HEMTs
Author_Institution :
Mil. Tech. Acad., Bucharest, Romania
Abstract :
In this paper, the author proposes a new type of monolithic frequency doubler, consisting of an array of pseudomorphic HEMTs, separated by inductances. As equivalent circuit, the doubler contains two nonlinear lines, one for the gate and one for the drain, which are coupled by the gate to drain capacitance. It is shown that the frequency bandwidth of this type of doubler is much larger compared to those obtain by other means. For the example presented in this paper, the +/-3 dB frequency bandwidth exceeds three octaves with a conversion efficiency of ~30%
Keywords :
HEMT integrated circuits; MMIC frequency convertors; arrays; capacitance; digital simulation; equivalent circuits; frequency multipliers; high electron mobility transistors; integrated circuit modelling; semiconductor device models; 30 percent; array; bandwidth; computer simulation; conversion efficiency; drain; equivalent circuit; frequency bandwidth; gate; gate-drain capacitance; inductances; microwaves; monolithic broadband frequency doubler; monolithic frequency doubler; nonlinear lines; pseudomorphic HEMTs; Bandwidth; Capacitance; Coupling circuits; Distributed amplifiers; Distributed parameter circuits; Equivalent circuits; Frequency conversion; HEMTs; MODFETs; PHEMTs;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810518
