A new type of monolithic broadband frequency doubler by using an array of pseudomorphic HEMTs

Author

Simion, Stefan

Author_Institution

Mil. Tech. Acad., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

287

Abstract

In this paper, the author proposes a new type of monolithic frequency doubler, consisting of an array of pseudomorphic HEMTs, separated by inductances. As equivalent circuit, the doubler contains two nonlinear lines, one for the gate and one for the drain, which are coupled by the gate to drain capacitance. It is shown that the frequency bandwidth of this type of doubler is much larger compared to those obtain by other means. For the example presented in this paper, the +/-3 dB frequency bandwidth exceeds three octaves with a conversion efficiency of ~30%

Keywords

HEMT integrated circuits; MMIC frequency convertors; arrays; capacitance; digital simulation; equivalent circuits; frequency multipliers; high electron mobility transistors; integrated circuit modelling; semiconductor device models; 30 percent; array; bandwidth; computer simulation; conversion efficiency; drain; equivalent circuit; frequency bandwidth; gate; gate-drain capacitance; inductances; microwaves; monolithic broadband frequency doubler; monolithic frequency doubler; nonlinear lines; pseudomorphic HEMTs; Bandwidth; Capacitance; Coupling circuits; Distributed amplifiers; Distributed parameter circuits; Equivalent circuits; Frequency conversion; HEMTs; MODFETs; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810518

Filename

810518