Title :
Binding energy of a hydrogenic impurity in a finite parabolic quantum dot
Author :
Niculescu, Ecaterina C. ; Cristea, M.
Author_Institution :
Dept. of Phys., Politehnica Univ. of Bucharest, Romania
Abstract :
The binding energy of a hydrogenic donor in a spherical GaAs-Ga 1-xAlxAs quantum dot with parabolic confinement is calculated by taking into account the finite value of the barrier potential. Using the effective-mass approximation, we obtained the energy of the ground state as a function of the dot size for different impurity positions. The results show that the effect of the finite value of the barrier potential is to lower the energies of the states. The differences between the proper solutions and the infinite barrier potential approximation increase noticeably, especially for on-center impurity and for small dot radii
Keywords :
III-V semiconductors; aluminium compounds; binding energy; effective mass; gallium arsenide; ground states; impurity states; semiconductor quantum dots; GaAs-GaAlAs; barrier potential; binding energy; dot size; effective-mass approximation; finite parabolic quantum dot; ground state; hydrogenic donor; hydrogenic impurity; infinite barrier potential approximation; on-center impurity; parabolic confinement; small dot radii; spherical GaAs-Ga1-xAlxAs quantum dot; Conducting materials; Dielectric materials; Impurities; Optical modulation; Physics; Quantum dot lasers; Quantum dots; Stationary state; US Department of Transportation; Wave functions;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810532
