Title :
Nonlinear refractive index in thin GexSb40-xS 60 films
Author :
Pamukchieva, Vesela ; Szekeres, Anna ; Sharlandjiev, Peter
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
A suitable relationship between the linear nL and the nonlinear refractive index n2 has been used for prediction of the nonlinear behavior of the refractive index in thin GexSb 40-xS60 films. The parameters (linear refractive index nL and the dispersion parameters E0 and E d) necessary for the calculation of the n2 are studied by means of spectrophotometry in the light wavelength region of 0.5-2.5 μm. It has been established that the nonlinear refractive index increases with increasing linear refractive index. The obtained results for nL and n2 are considered in terms of the average coordination number Z. The observed peculiarity in the compositional dependences of the linear and nonlinear refractive indices around Z=2.65-2.67 can be connected with the structural changes associated with a topological phase transition of the film structure
Keywords :
chalcogenide glasses; germanium compounds; nonlinear optics; optical films; optical glass; refractive index; semiconductor thin films; spectrophotometry; vacuum deposited coatings; (GeSb)40S60; 0.5 to 2.5 micrometre; average coordination number; chalcogenide glasses; dispersion parameters; film structure; linear refractive index; nonlinear optical materials; nonlinear refractive index; semiconductor thin films; spectrophotometry; topological phase transition; Composite materials; Dispersion; Glass; Nonlinear optics; Optical films; Optical materials; Optical refraction; Optical variables control; Refractive index; Stimulated emission;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810533