Title :
Optimization of the MPS rectifier via variation of Schottky region area
Author :
Tu, S. H Larry ; Baliga, B. Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The authors discuss the optimization of the switching characteristics of the MPS (merged PIN/Schottky) rectifier by varying the relative area of the P-N junction and Schottky regions. Extensive two-dimensional numerical simulations have been performed of the forward condition and reverse recovery switching characteristics. It has been found that a trade-off curve between the forward voltage drop and the reverse recovery time can be obtained by varying the area of the Schottky region, while maintaining a constant minority carrier lifetime. This trade-off curve is superior to that obtained for the PIN rectifier using lifetime control. Experimental data that corroborate this theoretical prediction have been obtained by fabrication of 700 V devices. This method of performing the trade-off between the forward drop and the turn-off time has the advantage that it can be done by device design without the problems and additional processing cost associated with lifetime control
Keywords :
Schottky-barrier diodes; p-i-n diodes; semiconductor device models; solid-state rectifiers; switching; 700 V; MPS rectifier; Schottky region area variation; constant minority carrier lifetime; forward condition; forward voltage drop; merged PIN/Schottky rectifier; p-n junction area variation; reverse recovery switching; reverse recovery time; switching characteristics; turnoff time; two-dimensional numerical simulations; Analytical models; Charge carrier lifetime; Computational modeling; Computer simulation; Frequency; P-i-n diodes; P-n junctions; PIN photodiodes; Rectifiers; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146078
