Cathodoluminescence investigation of oxidized porous silicon

Author

Plugaru, R. ; Bercu, M. ; Craciun, G. ; Avramescu, V. ; Rams, J. ; Piqueras, J.

Author_Institution

Inst. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

375

Abstract

The luminescent emission related to the structural reconstruction of the porous silicon surface under dry oxygen atmosphere annealing was investigated by cathodoluminescence in the scanning electron microscope. The evolution of the emission bands at 420-480 nm, 590 nm and 640 nm as a function of the annealing treatments is discussed on the basis of present model of surface recombination in porous silicon

Keywords

annealing; anodisation; bonds (chemical); cathodoluminescence; core levels; elemental semiconductors; energy gap; nanostructured materials; oxidation; porous semiconductors; scanning electron microscopy; silicon; surface reconstruction; 420 to 480 nm; 590 nm; 640 nm; SEM cathodoluminescence; Si; SiO₂; anodic oxidation; bond structure; core states; dry oxygen atmosphere annealing; emission bands evolution; luminescent emission; nanocrystalline structures; oxidized porous silicon; porous silicon surface; structural reconstruction; surface band gap; surface radiative recombination; surface states; Annealing; Atmosphere; Crystallization; Electron emission; Oxidation; Scanning electron microscopy; Silicon; Surface reconstruction; Surface treatment; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810541

Filename

810541