Title :
A 1.25 Gbit/s four channel GaAs MSI integrated with MSM-PDs for optical interconnection
Author :
Uematsu, Y. ; Yamabayashi, Y. ; Hohkawa, K. ; Togashi, M. ; Tanaka, N. ; Arai, Y.
Author_Institution :
NTT Transmission Syst. Labs., Kanagawa, Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
In summary a high-speed GaAs MESFET MSI multiplexed photoreceiver monolithically integrated with 4 metal-semiconductor-metal photodiodes (MSM-PDs) was designed to optically interconnect high speed GaAs LSIs. Concurrent error free operation of four-channels, each at 1.25 Gbit/s, was confirmed, and the maximum dynamic range was 1.5 dB with four-channel concurrent operation with a common reference voltage
Keywords :
gallium arsenide; 1.25 Gbit/s; GaAs; MSM-PDs; common reference voltage; concurrent error free operation; four channel GaAs MSI; four-channel concurrent operation; four-channels; high speed GaAs LSIs; high-speed GaAs MESFET; maximum dynamic range; metal-semiconductor-metal photodiodes; multiplexed photoreceiver; optical interconnection; optically interconnect; Dynamic range; Gallium arsenide; Integrated circuit interconnections; Laboratories; Optical buffering; Optical distortion; Optical interconnections; Optical receivers; Optical sensors; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586339