Radiation induced change of the effective doping concentration in silicon detectors

Author

Petris, Mariana

Author_Institution

Nat. Inst. for Phys. & Nucl. Eng., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

393

Abstract

Ion implanted n-type standard, oxygenated and nitrogenated silicon detectors have been irradiated with 24 GeV/c proton beam, up to a fluence of 10¹⁴ cm^-2. The effective doping concentration versus fluence and the values of the inversion fluence are presented for each type of silicon detector. Results of charge collection measurements made for the damaged detectors using an ²⁴¹Am α source are reported

Keywords

Frenkel defects; alpha-particle detection; deep levels; doping profiles; elemental semiconductors; ion implantation; proton effects; radiation hardening (electronics); silicon radiation detectors; space charge; 24 GeV; Frenkel pair; Si; Si:N; Si:O; charge collection measurements; damaged detectors; deep trap levels; effective doping concentration; inversion fluence; ion implanted n-type standard silicon; nitrogenated silicon; oxygenated silicon; p-n diodes; proton beam irradiated; radiation hardness; radiation induced change; silicon detectors; space charge buildup; Diodes; Doping; Impurities; Lattices; Nitrogen; Particle beams; Radiation detectors; Silicon radiation detectors; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810545

Filename

810545