Title :
Radiation induced change of the effective doping concentration in silicon detectors
Author_Institution :
Nat. Inst. for Phys. & Nucl. Eng., Bucharest, Romania
Abstract :
Ion implanted n-type standard, oxygenated and nitrogenated silicon detectors have been irradiated with 24 GeV/c proton beam, up to a fluence of 1014 cm-2. The effective doping concentration versus fluence and the values of the inversion fluence are presented for each type of silicon detector. Results of charge collection measurements made for the damaged detectors using an 241 Am α source are reported
Keywords :
Frenkel defects; alpha-particle detection; deep levels; doping profiles; elemental semiconductors; ion implantation; proton effects; radiation hardening (electronics); silicon radiation detectors; space charge; 24 GeV; Frenkel pair; Si; Si:N; Si:O; charge collection measurements; damaged detectors; deep trap levels; effective doping concentration; inversion fluence; ion implanted n-type standard silicon; nitrogenated silicon; oxygenated silicon; p-n diodes; proton beam irradiated; radiation hardness; radiation induced change; silicon detectors; space charge buildup; Diodes; Doping; Impurities; Lattices; Nitrogen; Particle beams; Radiation detectors; Silicon radiation detectors; Spectroscopy; Voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810545
