• DocumentCode
    348234
  • Title

    Photovoltaic properties of the Bi4Ti3O12 /Si heterostructures

  • Author

    Pintilie, L. ; Pintilie, I. ; Alexe, M.

  • Author_Institution
    Nat. Inst. of Mater. Res., Bucharest-Magurele, Romania
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    397
  • Abstract
    Photovoltaic properties of the Bi4Ti3O12/Si heterostructures were investigated in the 250-1100 nm wavelength range. Four bands centered on 400 nm, 500 nm, 865 nm and 1025 nm are observed in the normalized spectral distributions. The relative amplitude of the peaks corresponding to these bands depends on the annealing temperature and ferroelectric polarization
  • Keywords
    MOS capacitors; annealing; bismuth compounds; dielectric polarisation; elemental semiconductors; ferroelectric capacitors; ferroelectric thin films; photodetectors; photovoltaic effects; silicon; 250 to 1100 nm; AC photovoltage; Bi4Ti3O12-Si; annealing temperature; band gap; chemical solution deposition; ferroelectric polarization; ferroelectric/semiconductor heterostructures; light sensors; normalized spectral distributions; perovskite films; photovoltaic properties; relative amplitude of peaks; Annealing; Bismuth; Ferroelectric films; Ferroelectric materials; Optical films; Optical modulation; Performance evaluation; Photovoltaic systems; Solar power generation; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810546
  • Filename
    810546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348234