Title :
Introducing the NV-GSD/VHE very high energy implanter
Author :
Wilson, Shaun ; McIntyre, Edward
Author_Institution :
Semicond. Equipment Oper., Eaton Corp., Beverly, MA, USA
Abstract :
The NV-GSD/VHE is Eaton´s next generation, linear accelerator-based high energy implanter. An evolutionary step from the NV-GSD/HE, the NV-GSD/VHE is designed to support all applications covered by the NV-GSD/HE in addition to research and development activities for epi-replacement, manufacturing of deep triple well structures, and production of deep implants for CCD devices. The NV-GSD/VHE delivers beam currents of B+ in excess of 1 pmA at energies approaching 1.7 MeV, B++ to energies approaching 3 MeV and P+++ energies approaching 5 MeV. The beamline of the NV-GSD/VHE is designed to be field upgradeable to further extend the energy ranges of all species, if required, to match future process requirements. The NV-GSD/VHE employs components and subsystems including the source, injector and end station, which are identical to those of the production proven NV-GSD/HE. Like the NV-GSD/HE, the NV-GSD/VHE offers fully automated operation, high throughput, excellent medium current implanter process performance, excellent control over differential channeling, and unsurpassed beam purity
Keywords :
beam handling techniques; integrated circuit manufacture; ion implantation; particle beam stability; 1.7 MeV; 3 MeV; 5 MeV; B; B++; B+; CCD devices; CMOS technology; Eaton NV-GSD/VHE very high energy ion implanter; P; P+++; beam currents; beam energies; beam purity; beamline; deep implants; deep triple well structure manufacturing; differential channeling control; epi-replacement; fully automated operation; high throughput; linear accelerator-based high energy implanter; medium current implanter process performance; Acceleration; Automatic control; Charge coupled devices; Helium; Implants; Manufacturing; Process control; Production; Research and development; Throughput;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586351
