A novel soft and fast recovery diode (SFD) with thin p-layer formed by Al-Si electrode

Author

Mori, Mutsuhiro ; Yasuda, Yasumichi ; Sakurai, Naoki ; Sugawara, Yoshitaka

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

113

Lastpage

117

Abstract

A novel, soft and fast recovery diode (SFD) is presented which has extremely thin p-layers formed by an Al-Si electrode and deep p⁺-layers. By using the thin p-layer, the hole density in the n^--layer close to the p-n junction is reduced, and a 1/2.5 lower recovery current peak, 1/3 lower recovery current change, and 1.5 times faster recovery time are realized compared to a conventional p-n diode. Moreover, increasing the barrier height of the p-layer causes the leakage current and forward voltage drop to decrease. It is also demonstrated that electrical noise and turn-on loss of an IGBT module in an inverter circuit can be significantly improved by using the SFD as a free wheeling diode

Keywords

electron device noise; semiconductor diodes; Al-Si electrode; AlSi-Si; IGBT module; barrier height; deep p⁺-layers; electrical noise; forward voltage drop; free wheeling diode; hole density; inverter circuit; leakage current; soft fast recovery diode; thin p-layers; turn-on loss; Acoustical engineering; Circuit noise; Electrodes; Insulated gate bipolar transistors; Inverters; Laboratories; Leakage current; Noise reduction; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146079

Filename

146079