DocumentCode
3482682
Title
Hollow TSV VS solid TSV and the effect of medium filling in the hollow TSV
Author
Ning Jianye ; Miao Min ; Li Zhensong ; Li Qinghai
Author_Institution
Inf. Microsyst. Inst., Beijing Inf. Sci. & Technol. Univ., Beijing, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
1308
Lastpage
1311
Abstract
This paper focuses on the effect to the transmission characteristic of the hollow TSV. Three parts will be figured out to make it around using the high frequency structure simulator: first, the variation of radius and length of the hollow portion; second, the change of the position of hollow portion; the last, the effect to the transmission performance while the hollow portion is filled with different mediums having different dielectric permittivity and different conductivity. The study showed that the hollow TSV does not cause any significant impact to the TSV´s transmission characteristics in the high frequency band, but we must be very careful in the VHF band. Through this work, we hope that it can provide some reference and guide for the TSV processing technology and technological process.
Keywords
integrated circuit interconnections; integrated circuit packaging; permittivity; three-dimensional integrated circuits; dielectric permittivity; high frequency band; high frequency structure simulator; hollow TSV; medium filling; solid TSV; transmission characteristic; Conductivity; Dielectrics; Electronics packaging; Permittivity; Solids; Three-dimensional displays; Through-silicon vias; hollow TSV; solid TSV;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756698
Filename
6756698
Link To Document