• DocumentCode
    3482682
  • Title

    Hollow TSV VS solid TSV and the effect of medium filling in the hollow TSV

  • Author

    Ning Jianye ; Miao Min ; Li Zhensong ; Li Qinghai

  • Author_Institution
    Inf. Microsyst. Inst., Beijing Inf. Sci. & Technol. Univ., Beijing, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    1308
  • Lastpage
    1311
  • Abstract
    This paper focuses on the effect to the transmission characteristic of the hollow TSV. Three parts will be figured out to make it around using the high frequency structure simulator: first, the variation of radius and length of the hollow portion; second, the change of the position of hollow portion; the last, the effect to the transmission performance while the hollow portion is filled with different mediums having different dielectric permittivity and different conductivity. The study showed that the hollow TSV does not cause any significant impact to the TSV´s transmission characteristics in the high frequency band, but we must be very careful in the VHF band. Through this work, we hope that it can provide some reference and guide for the TSV processing technology and technological process.
  • Keywords
    integrated circuit interconnections; integrated circuit packaging; permittivity; three-dimensional integrated circuits; dielectric permittivity; high frequency band; high frequency structure simulator; hollow TSV; medium filling; solid TSV; transmission characteristic; Conductivity; Dielectrics; Electronics packaging; Permittivity; Solids; Three-dimensional displays; Through-silicon vias; hollow TSV; solid TSV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756698
  • Filename
    6756698