Title :
Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW
Author :
Akage, Y. ; Takeuchi, H. ; Tsuzuki, K. ; Kondo, S. ; Noguchi, Y. ; Okamoto, H. ; Yamanaka, T.
Author_Institution :
NTT Photonics Labs., Nippon Telegraph & Telephone Corp., Atsugi, Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
It is well known that polarization-independent operation has been obtained in a MQW EA modulator with tensile-strained walls. However, as far we know, no synthetic approach to the polarization-independent EA modulator by means of optimizing the MQW strain has been reported. In this paper, we describe a well-resolved absorption spectra correlating to the valence-subband structure as a function of the strain of the well. Also we report our development of the polarization-independent InGaAlAs/InAlAs MQW EA modulator by optimizing the MQW strain and the structure of the modulator.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; infrared spectra; quantum well devices; semiconductor quantum wells; valence bands; InGaAlAs-InAlAs; MQW strain; absorption spectra; optimized strained-MQW; polarization-independent InGaAlAs/InAlAs electroabsorption modulators; structure; valence-subband structure; Absorption; Capacitive sensors; Indium compounds; Optical modulation; Optical polarization; Page description languages; Quantum well devices; Resonance; Tellurium; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811368
