Bernas ion source for Genus Tandetron ion implanters

Author

Sakase, Takao ; Maciejowski, Peter E. ; Leavitt, William H. ; Tokoro, Nobuhiro

Author_Institution

Ion Technol. Div., Genus Inc., Newburyport, MA, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

407

Lastpage

410

Abstract

A Bernas type ion source has been developed for Genus high energy ion implanters. The new source increases output by 50% and lifetime by 100% for boron applications, compared to the standard Genus PIG ion source. Up to 49 mA of total beam has been extracted from a BF₃ plasma through an aperture, 7.0 mm in diameter, and 14 mA of analyzed boron current (¹¹B⁺) has been obtained. This is equivalent to providing a 85% margin above the specified boron current for Genus 1510 implanters. In this paper, the source configuration, output performance and lifetime are presented

Keywords

boron; ion implantation; ion sources; particle beam extraction; 14 mA; 49 mA; ¹¹B⁺; B; B ion implantation; BF₃; BF₃ plasma; Bernas ion source; Genus Tandetron ion implanters; Genus high energy ion implanters; analyzed B current; aperture; beam extraction; lifetime; output performance; source configuration; Anodes; Apertures; Boron; Cathodes; Geometry; Insulation; Ion accelerators; Ion sources; Magnetic field measurement; Magnetic flux;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586376

Filename

586376