Title :
Bernas ion source for Genus Tandetron ion implanters
Author :
Sakase, Takao ; Maciejowski, Peter E. ; Leavitt, William H. ; Tokoro, Nobuhiro
Author_Institution :
Ion Technol. Div., Genus Inc., Newburyport, MA, USA
Abstract :
A Bernas type ion source has been developed for Genus high energy ion implanters. The new source increases output by 50% and lifetime by 100% for boron applications, compared to the standard Genus PIG ion source. Up to 49 mA of total beam has been extracted from a BF3 plasma through an aperture, 7.0 mm in diameter, and 14 mA of analyzed boron current (11B+) has been obtained. This is equivalent to providing a 85% margin above the specified boron current for Genus 1510 implanters. In this paper, the source configuration, output performance and lifetime are presented
Keywords :
boron; ion implantation; ion sources; particle beam extraction; 14 mA; 49 mA; 11B+; B; B ion implantation; BF3; BF3 plasma; Bernas ion source; Genus Tandetron ion implanters; Genus high energy ion implanters; analyzed B current; aperture; beam extraction; lifetime; output performance; source configuration; Anodes; Apertures; Boron; Cathodes; Geometry; Insulation; Ion accelerators; Ion sources; Magnetic field measurement; Magnetic flux;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586376
