Title :
Deposition of a-C:H films on large-area plane dielectric substrates by means of pulsed surface discharge at atmospheric pressure
Author :
Bugaev, S.P. ; Oskomov, K.V. ; Sochugov, N.S.
Author_Institution :
Inst. of High-Current Electron., Acad. of Sci., Tomsk, Russia
Abstract :
A new-developed method for deposition of amorphous hydrogenated diamond-like carbon (a-C:H) films on plate dielectric substrates by means of pulsed surface (gliding) discharge at atmospheric pressure is presented here. It was found that films properties are influenced mainly by pulse volume energy density and, in less extent, by average surface power density of discharge, with optimum at about 75 J/cm3 and 2-3 W/cm2 correspondingly. Diamond-like films deposited from methane under these conditions are similar to those obtained by traditional low-pressure (p<10 Torr) methods of chemical vapour deposition, but the equipment for a-C:H film deposition in the surface discharges is much simpler and cheaper than the vacuum systems with various types of plasma generator conventionally used for this purpose. To demonstrate technological potential of the proposed method set-up for deposition of a-C:H films on flat dielectric substrates of 20×50 cm2 was created
Keywords :
amorphous semiconductors; carbon; diamond; hydrogen; plasma CVD; semiconductor thin films; surface discharges; 10 torr; 20 cm; 50 cm; C:H; a-C:H film deposition; amorphous hydrogenated diamond-like carbon; atmospheric pressure; gliding discharge; large-area plane dielectric substrates; methane; plasma deposition; plasma generator; pulsed surface discharge; Amorphous materials; Coatings; Diamond-like carbon; Dielectric substrates; Electrodes; Fault location; Plasma properties; Sparks; Surface discharges; Voltage;
Conference_Titel :
High-Power Particle Beams, 1998. BEAMS '98. Proceedings of the 12th International Conference on
Conference_Location :
Haifa
Print_ISBN :
0-7803-4287-9
DOI :
10.1109/BEAMS.1998.817015